Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Classification of electronic componentsDescription: Silicon N Channel Power MOS FET Power Switching6291
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Category: Classification of electronic componentsDescription: N60 V, 80 A, 5.2 m N-channel MOS FET with 60 V, 80 A, 5.2 m7172
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Category: Classification of electronic componentsDescription: Built in SBD N Channel Power MOS FET High Speed Power Switching1498
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Category: Classification of electronic componentsDescription: Silicon N Channel Power MOS FET Power Switching1214
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 25A 63000mW 3Pin(2+Tab) LDPAK(S)-1 T/R3506
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Category: IGBTtransistorDescription: IGBT Discrete, Renesas Electronics IGBT (Insulated Gate Bipolar Transistor) is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.5547
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Category: Classification of electronic componentsDescription: Silicon N Channel IGBT High Speed Power Switching8750
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Category: IGBTtransistorDescription: * Low collector to emitter saturation voltage * VCE(sat) = 1.35V typ. (at IC = 50A, VGE = 15V, Ta = 25℃) * Built in fast recovery diode in one package * Trench gate and thin wafer technology * High speed switching * tf = 74ns typ. (at IC = 30A, VCE = 400V, VGE = 15V, Rg = 5Ω, Ta = 25℃, inductive load)5972
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Category: IGBTtransistorDescription: RENESAS RJH60F7DPQ-A0#T0 Single transistor, IGBT, 90 A, 1.6 V, 328.9 W, 600 V, TO-247, 3 pins1413
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 16A 52000mW 3Pin(2+Tab) LDPAK(S)-1 T/R6706
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Category: Classification of electronic componentsDescription: Trans IGBT Chip N-CH 600V 60A Box9188
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Category: Classification of electronic componentsDescription: Silicon N Channel IGBT High Speed Power Switching2668
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Category: Classification of electronic componentsDescription: Silicon N Channel IGBT High Speed Power Switching2578
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 50A 192300mW 3Pin(3+Tab) TO-247 Tube2700
